willie_901
Veteran
On your web site's article on backlighting you (or Francis) discussed factors influencing flare and wrote, "Over-exposure. You might expect exposure to march in step with density (of negatives) but it does not usually work that way: flare almost always builds faster than image density." This statement seems to apply to both ghosting flare and veiling flare.
Do you think this holds for digital media as well? The flare intensity would be proportional to exposure. But would the flare amplitude increase more than direct-light amplitude, especially with gratuitous, gross overexposure? I can't think of a reason why light inducing chemical reactions would be different then light creating electrical charge in semiconductor wells.
Clipped analog signals at the sensor when the shutter is open and clipped analog signals in the ADC when ISO is greater than base ISO cause problems. But flare (reflections) are no different than any other light source in these events. So I an not thinking about clipping.
Sensor bloom is efficiently suppressed in contemporary, sensor-semiconductor technology. I recently read over exposure artifacts in digital imaging is almost always mis-attributed to sensor bloom (excess charge propagating to nearby sensor wells) rather than lens independent flare effects associated with microlenses and sensor cover glass. If these effects are in fact responsible for artifacts in overexposed images, then they could be relevant to my question. They would also be highly dependent on camera design and hardware differences.
So my primary concern is veiling flare contributions from the lens itself along with reflections arising from the lens-sensor geometry.
Sorry to ask annoying questions, but my research on this topic is frustrated by conflicting, contradicting articles.
Do you think this holds for digital media as well? The flare intensity would be proportional to exposure. But would the flare amplitude increase more than direct-light amplitude, especially with gratuitous, gross overexposure? I can't think of a reason why light inducing chemical reactions would be different then light creating electrical charge in semiconductor wells.
Clipped analog signals at the sensor when the shutter is open and clipped analog signals in the ADC when ISO is greater than base ISO cause problems. But flare (reflections) are no different than any other light source in these events. So I an not thinking about clipping.
Sensor bloom is efficiently suppressed in contemporary, sensor-semiconductor technology. I recently read over exposure artifacts in digital imaging is almost always mis-attributed to sensor bloom (excess charge propagating to nearby sensor wells) rather than lens independent flare effects associated with microlenses and sensor cover glass. If these effects are in fact responsible for artifacts in overexposed images, then they could be relevant to my question. They would also be highly dependent on camera design and hardware differences.
So my primary concern is veiling flare contributions from the lens itself along with reflections arising from the lens-sensor geometry.
Sorry to ask annoying questions, but my research on this topic is frustrated by conflicting, contradicting articles.